Scientists from Russia and China are developing ultra-fast memory for phones and computers.
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The Russian “Far Eastern Federal University” (FEFU) has announced that an international team of its scientists, along with researchers from “Sakhalin State University” and several Chinese scientific centers, has reached a solution for producing a new generation of ultra-fast non-volatile memory called “SOT-MRAM.” This technology prevents data loss in smartphones and computers when power is cut.
The university explained that computers, smartphones, and other modern devices suffer from persistent performance slowdowns due to the significant disparity between processor speed and memory unit speed. It noted that the new technology could help resolve this issue, as it “enables data recording at speeds tens of times faster than current flash storage units, while consuming significantly less power.”
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