Scientists from Russia and China are developing ultra-fast memory for phones and computers.

Related Articles

Enemy shelling and incursions target several villages in southern Lebanon

21 minutes ago

## Iranian Foreign Ministry: U.S. Airstrikes Violate the First Clause of the Memorandum of Understanding

2 days ago

## Tehran–Washington Memorandum of Understanding: Why Are Experts Skeptical?

2 days ago

**Russian Far Eastern Federal University Develops New Ultra-Fast Memory Technology**

The Russian Far Eastern Federal University has announced that an international team of its researchers, in collaboration with Sakhalin State University and several Chinese scientific centers, has developed a solution to produce a new generation of ultra-fast non-volatile memory called “SOT-MRAM.” This technology ensures that data is not lost when power is cut off from smartphones and computers.

The university explained that modern computers, smartphones, and other devices suffer from persistent performance bottlenecks due to the significant gap between processor speed and memory speed. It noted that this new technology could help resolve this issue, as it “allows for data writing at speeds dozens of times faster than current flash storage units, while consuming significantly less energy.”